Applications switching and amplification in high voltage applications such as telephony. This data sheet provides information on subminiature size, axial lead mounted. Semiconductor data sheets andor specifications can and do vary in different. The 2n5551 is an npn amplifier transistor with an amplification factor of 80 when the collector current is 10ma. So if you are looking for an npn transistor for you amplifier circuit then this transistor might be the right choice. This device is designed for generalpurpose high voltage. Pinning pin description 1 emitter 2 base 3 collector, connected to case fig. Com is the biggest online electronic component datasheets search engine.
The product status of the devices described in this data sheet may have changed since this data sheet was published. The circuit schematic symbol of a diode is shown in figure 5. Dec 21, 2017 the 2n5551 is an npn amplifier transistor with an amplification factor of 80 when the collector current is 10ma. It also has decent switching characteristics transition frequency is 100mhz hence can amplify lowlevel signals. Diode schematic symbol and actual picture of a common 1n914 diode the black stripe in the picture is the cathode. The tip31c is a base island technology npn power transistor in to220 plastic package with better performances than the industry standard tip31c that make this device suitable for audio, power linear and switching applications. Semtech npn silicon expitaxial planar transistor for general purpose, high voltage amplifier applications,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 unit. Collector current c v 5v ce t 150c a t 25c a t 50c a 0. Elektronische bauelemente 2n5551 600ma, 160v npn plastic encapsulated transistor rohs compliant pr. Ja thermal resistance, junction to ambient 200 357 cw c b e to92 c b e sot23 mark. Click here specifications bipolar transistor transistor polarity. Com datasheet search site for electronic components and semiconductors and other semiconductors. Preferred devices are recommended choices for future use and best overall value.
Toshiba transistor silicon npn epitaxial type pct process 2sc1815 audio frequency general purpose amplifier applications driver stage amplifier applications high voltage and high current. Vceo160v high current gain applications telephone switching circuit amplifier ordering information ordering number pin assignment package packing lead free plating halogen free 1 2 3 2n5551lx. The product status of devices described in this document may have changed since this document was published and may differ in case of multiple devices. Bc546b, bc547a, b, c, bc548b, c amplifier transistors. Trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. Ordering information note 4 device packaging shipping. At a minimum such license agreement shall safeguard on semiconductors ownership rights to the software. If you cant search it here, nowhere else in the world. This device is designed for generalpurpose highvoltage. To18 metal can package dimensions minimum maximum a 5. Unfollow transistor 2n5551 to stop getting updates on your ebay feed. Emitter voltage 2n5550 2n5551 vceo 140 160 vdc collector.
Aug 29, 2016 2n5551 datasheet npn amplifier fairchild, mmbt5551 datasheet, 2n5551 pdf, 2n5551 pinout, 2n5551 equivalent, data, circuit, output, ic, 2n5551 schematic. Semiconductor data sheets andor specifications can and do vary in. Bc546b, bc547a, b, c, bc548b, c 5 ordering information device package shipping bc546b to. Free devices maximum ratings rating symbol value unit collector. Hence comparing the schematic symbol to the pn junction in figure 4, we see the anode is the ptype semiconductor and the cathode is the ntype semiconductor.
Jan 19, 2014 reverse current vs reverse voltage 1n4001 1n4007, rev. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers vceo vcbo vebo ic tj, tstg collectorbase voltage emitterbase voltage collector current continuous collectoremitter voltage. Absolute maximum ratings ta 25c unless otherwise noted. Vcbo 180v, vceo 160v low collector saturation voltage. Please consult the most recently issued document before initiating or completing a design. Jul 05, 2017 c2073 datasheet vceo 150v, npn power transistor mospec, 2sc2073 datasheet, c2073 pdf, c2073 pinout, c2073 data, c2073 crcuit, output, c2073 schematic.
Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007. Vceo 50 v min, ic 150 ma max excellent hfe linearity. Complementary pair with 2n5401 ordering information type no. Complementary power transistors features complementary pnpnpn devices new enhanced series high switching speed hfe grouping hfe improved linearity applications general purpose circuits audio amplifier power linear and switching description the tip41c is a base island technology npn power transistor in to220 plastic package that. It also has decent switching characteristics so can amplify lowlevel signals. Please consult the most recently issued data sheet before initiating or completing a design. Unit vcbo collectorbase voltage open emitter 2n2222. The 2n5551 is an npn amplifier transistor with an amplification factor hfe of 80 when the collector current is 10ma. Changing the value of r l will affect the amplification of the output wave.
A very simple bare minimum circuit for a transistor to work as an amplifier is shown below. Semiconductor components industries, llc, 2004 june, 2004. Base voltage 2n5550 2n5551 vcbo 160 180 vdc emitter. Vceo160v high current gain applications telephone switching circuit amplifier ordering information ordering number pin assignment package packing lead free plating. Due to this feature, the transistor is commonly used for amplification of audio or other low power signals. Toshiba transistor silicon npn epitaxial type pct process. Ssm21 2n5551 equivalent rca 46 npn transistor rca 467 hf wide band class ab power amplifier mosfet transistor equivalent 2n5551 transistor 2n5551 ssm21p audio power amplifier mosfet toshiba text. Bc547 bc547a bc547b bc547c npn general purpose amplifier. H absolute maximum ratings ta25 c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo 180 v collectoremitter voltage vceo 160 v emitterbase voltage vebo 6 v to92 625 mw collector dissipation sot89 pc 500 mw. Npn silicon transistor general purpose amplifier high voltage application. Onsemi, alldatasheet, datasheet, datasheet search site for electronic. Vceo160v high current gain applications telephone switching circuit amplifier ordering information ordering number pin assignment package packing lead free.
517 839 546 1250 644 494 181 318 1439 80 1341 342 395 1146 58 577 1441 372 1109 895 834 1330 1452 244 741 1193 1178 628 845 859